Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices

The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been promising topic research in recent years. Along with Silicon Carbide (SiC) and (GaN), AlGaN is categorized Wideband Gap (WBG) intrinsic properties best suited for high applications. This paper simulates compares the thermal electrical performance (Si) MOSFETs, modeled COMSOL Multiphysics. Comparisons between similar AlGaN/GaN Si modules are made terms heatsink requirements. temperatures same operating voltage found to be significantly lower MOSFETs structures, compared Si. size smaller modules.